Search results for "Resistive touchscreen"
showing 10 items of 55 documents
Resistive communications based on neuristors
2017
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can function at the same time as memory and as a communication unit. This paper presents a new approach to the use of the memristor and develops the concept of resistive communication.
Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)
2018
Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…
High transparency Bi 2 Se 3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
2019
Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/Bi$_2$Se$_3$ topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the Bi$_2$Se$_3$ induced gap and of I$_c$R$_n$ (I$_c$ critical current, R$_n$ normal resistance of the junction) product both of the order of 160 $\mu$eV, a value close to the Al gap. T…
Minimally implicit Runge-Kutta methods for Resistive Relativistic MHD
2016
The Relativistic Resistive Magnetohydrodynamic (RRMHD) equations are a hyperbolic system of partial differential equations used to describe the dynamics of relativistic magnetized fluids with a finite conductivity. Close to the ideal magnetohydrodynamic regime, the source term proportional to the conductivity becomes potentially stiff and cannot be handled with standard explicit time integration methods. We propose a new class of methods to deal with the stiffness fo the system, which we name Minimally Implicit Runge-Kutta methods. These methods avoid the development of numerical instabilities without increasing the computational costs in comparison with explicit methods, need no iterative …
GLOBAL DELAY TIME FOR GENERAL DISTRIBUTED NETWORKS WITH APPLICATIONS TO TIMING ANALYSIS OF DIGITAL MOS INTEGRATED CIRCUITS
1989
We consider here a general nerwork composed by n‐distributed parameters lines (with telegraph‐equations models) and m‐capacitors, all connected by a resistive multiport. An asymptotic stability property drives us to define and evaluate a global parameter (“λ‐delay time”) which describes the speed of signals propagation through the network. Because of its simplicity of calculation and its tightness, the given upper bound of the λ‐delay time is useful in timing analysis of MOS integrated chips.
The Time Response of Glass Resistive Plate Chambers to Heavily Ionizing Particles
2007
The HARP system of resistive plate chambers (RPCs) was designed to perform particle identification by the measurement of the difference in the time-of-flight of different particles. In previous papers an apparent discrepancy was shown between the response of the RPCs to minimum ionizing pions and heavily ionizing protons. Using the kinematics of elastic scattering off a hydrogen target a controlled beam of low momentum recoil protons was directed onto the chambers. With this method the trajectory and momentum, and hence the time-of-flight of the protons can be precisely predicted without need for a measurement of momentum of the protons. It is demonstrated that the measurement of the time-o…
Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors
2013
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …
Metastable memristive lines for signal transmission and information processing applications
2016
Traditional studies of memristive devices have mainly focused on their applications in nonvolatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies-the transfer of information-can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable memristive circuits into a line, one obtains an architecture capable of transferring a signal edge from one space location to another. We emphasize that the suggested metastable memristive lines employ only resistive circuit components. Moreover, their networks (for example, Y-connected lines) have an info…
Address Event Representation (AER) approach to resistive sensor arrays
2020
Address event representation (AER) has become an excellent strategy when approaching traditional frame based applications, mainly vision sensors. In this paper, and Within this scope, the potential of the AER paradigm is demonstrated when considering resistive (non-vision) sensor arrays. For showing quantitative evidences, MOS AMS 0.35 μm versions of some of the circuit cells typically used in AER systems, such as Winner-Take-All (WTA) circuits, have been implemented and analyzed. In these unit-cells, basic resistance-controlled sources are considered as per sensing devices. Preliminary simulation results demonstrate that this approach is valid for a wide range of resistive sensors.